PART |
Description |
Maker |
FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
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INTERSIL[Intersil Corporation] Intersil, Corp.
|
HS-2600RH 5962D9567101VPC HS7B-2600RH-Q HS7-2600RH |
Radiation Hardened Wideband/ High Impedance Operational Amplifier Radiation Hardened Wideband, High
Impedance Operational Amplifier(抗辐射宽带、高阻抗运算放大 CONNECTOR ACCESSORY Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 12 MHz BAND WIDTH, CDIP8 Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, CDIP8
|
Intersil Corporation Intersil, Corp. http://
|
HS9-4423BRH HS9-4423BRH-8 HS-4423BRH HS9-4423BRH-Q |
Radiation Hardened Dual, Inverting Power MOSFET Drivers 2 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDFP16 Radiation Hardened Dual/ Inverting Power MOSFET Drivers
|
Intersil, Corp. Intersil Corporation
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FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
HCTS374D HCTS374DMSR HCTS374HMSR HCTS374K HCTS374K |
From old datasheet system Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Radiation Hardened Octal Transparent Latch/ Three-State
|
INTERSIL[Intersil Corporation]
|
5962-04238 5962-04239 5962-04240 5962-04241 5962-0 |
10W Total Output Power 28 Vin 3.3 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04238 10W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04239 10W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04240 10W Total Output Power 28 Vin 15 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04241 10W Total Output Power 28 Vin /-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242 10W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243 10W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04244
|
International Rectifier
|
FSTJ9055R4 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ905 |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 62 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
HS-82C54RH HS1-82C54RH HS1-82C54RH-8 HS1-82C54RH-Q |
From old datasheet system Radiation Hardened CMOS Programmable Interval Timer Radiation Hardened CMOS RProgrammable Interval TimerS
|
INTERSIL[Intersil Corporation]
|
XQR4000XL XQR4013XL-3CB228M XQR4036XL-3CB228M XQR4 |
QPRO XQR4000XL Radiation Hardened FPGAs QPRO radiation hardened FPGA.
|
Xilinx
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